# Samsung narrows SK hynix HBM lead as HBM4 shipments expand *Counterpoint Research data shows Samsung captured 33% of second-quarter HBM revenue, halving the lead of SK hynix as chipmakers shift toward custom foundry base dies.* **Published:** September 6, 2026 **By:** Ji-woo Han **Section:** Semiconductors & AI Hardware — South Korea **Format:** Why It Matters **Confidence:** medium **Source:** https://eastasiabrief.com/semiconductors/samsung-narrows-sk-hynix-hbm-lead-hbm4-shipments-expand-192 **Publisher:** East Asia Brief (https://eastasiabrief.com/) --- ## What to know - Samsung Electronics lifted its high-bandwidth memory revenue share to 33% in the second quarter, closing the gap with SK hynix to 17 percentage points, according to industry data released Sept. - Market researcher Counterpoint Research reported that SK hynix retained first place with a 50% revenue share during the April-to-June quarter. - Micron Technology held third place with an 18% share, sliding three percentage points over the same period. ![Robotic arms handle stacked memory components in a semiconductor cleanroom as technicians monitor the line. (AI-generated image)](https://eastasiabrief.com/media/2026-09-05-eff1292c28f7.webp) *Robotic arms handle stacked memory components in a semiconductor cleanroom as technicians monitor the line. (AI-generated image)* Samsung Electronics lifted its high-bandwidth memory revenue share to 33% in the second quarter, closing the gap with SK hynix to 17 percentage points, according to industry data released Sept. 4. Market researcher Counterpoint Research reported that SK hynix retained first place with a 50% revenue share during the April-to-June quarter. That figure dropped from 58% in the preceding quarter. Micron Technology held third place with an 18% share, sliding three percentage points over the same period. The margin separating SK hynix and Samsung shrank from 37 percentage points in the first quarter. Counterpoint Research noted that fifth-generation HBM3E modules generated most memory revenue through June. Shipments of sixth-generation HBM4 modules will expand during the second half of the year, the research firm said. The market shift reflects early commercial returns from Samsung's next-generation memory roadmap. Samsung announced on Feb. 12 that it had begun mass production of HBM4 using its sixth-generation 10-nanometer-class DRAM. That memory stack integrates a logic base die fabricated on Samsung's four-nanometer foundry process. The architecture delivers operating speeds of 11.7 gigabits per second and memory bandwidth reaching 3.3 terabytes per second. The base die sits at the bottom of the memory stack and manages signal routing to host processors. In earlier HBM generations, memory makers built that base layer using standard memory processes. HBM4 requires advanced logic nodes because accelerators demand higher interconnect density and lower power consumption. That structural change has turned foundry capabilities into a decisive manufacturing bottleneck across the memory sector. Samsung is using its position as an integrated device manufacturer to pitch a single-vendor turnkey model. The company handles DRAM cell manufacturing, foundry base-die fabrication and advanced packaging under a single operational roof. That integrated workflow aims to compress lead times for global cloud customers. Outsourcing each production step across different contractors can lengthen test cycles and complicate thermal defect management. Advanced Micro Devices agreed on March 18 to expand its technical partnership with Samsung. The agreement aligns primary HBM4 supply for AMD's next-generation Instinct MI455X graphics processing units. Samsung also signed a strategic memorandum of understanding with Broadcom on July 25. That agreement covers turnkey artificial intelligence semiconductor development targeting infrastructure projects through 2030. Customer diversification provides Samsung a direct pipeline for custom memory volumes. SK hynix has dominated commercial supply for Nvidia, supplying the bulk of HBM3 and HBM3E modules deployed in enterprise clusters. SK hynix is defending its lead through an alliance with Taiwan Semiconductor Manufacturing Company. The Korean memory supplier relies on TSMC to manufacture custom logic base dies on advanced foundry nodes. TSMC also integrates the memory stacks onto host logic using its Chip-on-Wafer-on-Substrate packaging lines. That partnership anchors SK hynix inside Nvidia's primary production ecosystem for high-performance computing hardware. Samsung expanded its advanced sampling pipeline on May 29 by shipping 12-layer HBM4E units to customers. The 48-gigabyte module supports pin speeds of up to 16 gigabits per second and 3.6 terabytes per second bandwidth. SK hynix executives reaffirmed during second-quarter corporate briefings that they would defend leadership through mass-production reliability. Customer qualification schedules and packaging yields remain the key metrics determining second-half output volumes. Micron Technology continues shipping 24-gigabyte eight-layer and 36-gigabyte 12-layer HBM3E products to AI accelerator clients. The Idaho-based chipmaker plans to transition its primary production lines toward HBM4 sampling next year. Foundry availability will shape how fast memory makers can satisfy custom specifications. Custom HBM requires designers to alter routing logic on the base die to match proprietary neural processing architectures. Samsung is dedicating portions of its four-nanometer foundry capacity in Pyeongtaek to logic base dies. The company has also expanded advanced packaging operations at its Cheonan campus to support turnkey delivery. For cloud hyperscalers, the choice between Samsung and the SK hynix-TSMC coalition involves supply risk allocation. Relying on TSMC binds memory delivery to tight advanced packaging allocations in Taiwan. Choosing Samsung provides an alternative manufacturing pipeline independent of Taiwanese packaging capacity. However, buyers must verify whether Samsung's foundry yields match TSMC's proven logic standards across large production runs. Samsung held a 39% share of the broader conventional DRAM market in the second quarter. Strong pricing across server memory lines bolstered overall semiconductor operating cash flow during the period. SK hynix generated 26% of broader DRAM sales in the second quarter. The Icheon-based manufacturer maintained higher operating margins due to its dominant share in high-margin HBM3E memory. Counterpoint Research projects global demand for high-bandwidth memory will sustain double-digit quarterly revenue growth through 2027. Generative AI clusters require wider memory pipelines to mitigate processor idle times during inference workloads. Both Korean manufacturers are accelerating equipment installation across their domestic fab complexes. Commercial delivery verification for next-generation accelerator chips begins in the fourth quarter. ## Impact map | Event | Korea | China | Japan | Global impact | | --- | --- | --- | --- | --- | | HBM4 transition | foundry turnkey | memory buyers | packaging materials | accelerator cost | ## In this story - **Companies:** Samsung Electronics, SK hynix - **Tickers:** 005930.KS, 000660.KS - **Exposed:** AMD, Broadcom, TSMC, Nvidia, Micron Technology - **Policy:** Economic Security - **Impact:** Supply Chain, Capex, Order Book ## Primary sources 1. metroseoul.co.kr 2. bizwatch.co.kr 3. samsung.com 4. press9.kr 5. counterpointresearch.com --- Cite as: East Asia Brief, "Samsung narrows SK hynix HBM lead as HBM4 shipments expand," September 6, 2026. https://eastasiabrief.com/semiconductors/samsung-narrows-sk-hynix-hbm-lead-hbm4-shipments-expand-192